Vertical MoTe2/Ge Heterojunction Photodiode for 1550-nm Near-Infrared Photodetection

被引：6

作者：

Lei, Wenyu ^{[1
,2
]}

Wen, Xiaokun ^{[1
,2
]}

Yang, Li ^{[1
,2
]}

Zhang, Pengzhen ^{[1
,2
]}

Cao, Guowei ^{[1
,2
]}

Zhuge, Fuwei ^{[1
,2
]}

Zhang, Youwei ^{[2
,3
,4
,5
]}

Chang, Haixin ^{[1
,2
]}

Zhang, Wenfeng ^{[1
,2
]}

机构：

[1] Huazhong Univ Sci & Technol, State Key Lab Mat Proc & Die & Mould Technol, Sch Mat Sci & Engn, Wuhan 430074, Peoples R China

[2] Huazhong Univ Sci & Technol, Shenzhen Res & Dev Ctr, Shenzhen 518000, Peoples R China

[3] Huazhong Univ Sci & Technol, MOE Key Lab Fundamental Phys Quant Measurement, Wuhan 430074, Peoples R China

[4] Huazhong Univ Sci & Technol, PGMF, Hubei Key Lab Gravitat & Quantum Phys, Wuhan 430074, Peoples R China

[5] Huazhong Univ Sci & Technol, Sch Phys, Wuhan 430074, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2022年 / 69卷 / 12期

基金：

中国国家自然科学基金;

关键词：

1550; nm; detectivity; MoTe2/Ge; photodiode; response speed; DETECTIVITY; LASER;

D O I：

10.1109/TED.2022.3212971

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a vertical MoTe2/Ge heterojunction near-infrared photodiode that exhibits a low dark current density, an improved capacity of weak optical signal detection with a peak detectivity of 1.15 x 10(11) Jones under a light density of 1 mW cm(-2), and a response speed with a rise/ fall time of 8/6 mu s operating at a 1550-nm light illumination. The device performance characteristics indicate that MoTe2/Ge heterojunction photodiode is promising for the potential practical applicationof photodetectionat 1550nm.

引用

页码：6825 / 6829

页数：5

共 50 条

[41] Photodiode-array-based near-infrared spectrophotometer for the 600-1100 nm wavelength region
Mayes, David M., 1600, (43):
[42] A PHOTODIODE-ARRAY-BASED NEAR-INFRARED SPECTROPHOTOMETER FOR THE 600-1100-NM WAVELENGTH REGION
MAYES, DM
CALLIS, JB
APPLIED SPECTROSCOPY, 1989, 43 (01) : 27 - 32
[43] Upconversion-nanoparticle-assisting near-infrared photosensitive effect at 1550 nm in organic photorefractive devices
Li, Juan
Zong, Wansheng
Xu, Shengang
Liu, Yingliang
Cao, Shaokui
OPTICAL MATERIALS, 2024, 157
[44] A high-performance near-infrared light photovoltaic detector based on a multilayered PtSe2/Ge heterojunction
Wang, Li
Li, Jing-Jing
Fan, Qi
Huang, Zheng-Feng
Lu, Ying-Chun
Xie, Chao
Wu, Chun-Yan
Luo, Lin-Bao
JOURNAL OF MATERIALS CHEMISTRY C, 2019, 7 (17) : 5019 - 5027
[45] High-performance near-infrared vertical organic phototransistors through bulk heterojunction integration
Zhao, Longfeng
Xie, Haihong
Xia, Jiangnan
Hu, Yuanyuan
APPLIED PHYSICS LETTERS, 2024, 124 (24)
[46] Near-Infrared, Self-Powered and Polarization-Sensitive Photodetector Based on GeSe-MoTe2 p-n Heterojunction
Zhang, Nan
Wu, Liangwei
Gao, Wei
Zhao, Qixiao
Huo, Nengjie
Li, Jingbo
ADVANCED MATERIALS INTERFACES, 2022, 9 (15)
[47] Vertical-tunneling field-effect transistor based on MoTe2/MoS2 2D-2D heterojunction
Koo, Bondae
Shin, Gwang Hyuk
Park, Hamin
Kim, Hojn
Choi, Sung-Yool
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 51 (47)
[48] Effects of Hydrogen Passivation on Near-Infrared Photodetection of n-Type β-FeSi2/p-Type Si Heterojunction Photodiodes
Promros, Nathaporn
Yamashita, Kyohei
Iwasaki, Ryu Hei
Yoshitake, Tsuyoshi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (10)
[49] Comparison of Gold and Silver/Gold Bimetallic Surface for Highly Sensitive Near-infrared SPR Sensor at 1550 nm
Jerome Hottin
Edy Wijaya
Laurent Hay
Sophie Maricot
Mohamed Bouazaoui
Jean-Pierre Vilcot
Plasmonics, 2013, 8 : 619 - 624
[50] Comparison of Gold and Silver/Gold Bimetallic Surface for Highly Sensitive Near-infrared SPR Sensor at 1550 nm
Hottin, Jerome
Wijaya, Edy
Hay, Laurent
Maricot, Sophie
Bouazaoui, Mohamed
Vilcot, Jean-Pierre
PLASMONICS, 2013, 8 (02) : 619 - 624

← 1 2 3 4 5 →