Vertical MoTe2/Ge Heterojunction Photodiode for 1550-nm Near-Infrared Photodetection

被引：6

作者：

Lei, Wenyu ^{[1
,2
]}

Wen, Xiaokun ^{[1
,2
]}

Yang, Li ^{[1
,2
]}

Zhang, Pengzhen ^{[1
,2
]}

Cao, Guowei ^{[1
,2
]}

Zhuge, Fuwei ^{[1
,2
]}

Zhang, Youwei ^{[2
,3
,4
,5
]}

Chang, Haixin ^{[1
,2
]}

Zhang, Wenfeng ^{[1
,2
]}

机构：

[1] Huazhong Univ Sci & Technol, State Key Lab Mat Proc & Die & Mould Technol, Sch Mat Sci & Engn, Wuhan 430074, Peoples R China

[2] Huazhong Univ Sci & Technol, Shenzhen Res & Dev Ctr, Shenzhen 518000, Peoples R China

[3] Huazhong Univ Sci & Technol, MOE Key Lab Fundamental Phys Quant Measurement, Wuhan 430074, Peoples R China

[4] Huazhong Univ Sci & Technol, PGMF, Hubei Key Lab Gravitat & Quantum Phys, Wuhan 430074, Peoples R China

[5] Huazhong Univ Sci & Technol, Sch Phys, Wuhan 430074, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2022年 / 69卷 / 12期

基金：

中国国家自然科学基金;

关键词：

1550; nm; detectivity; MoTe2/Ge; photodiode; response speed; DETECTIVITY; LASER;

D O I：

10.1109/TED.2022.3212971

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a vertical MoTe2/Ge heterojunction near-infrared photodiode that exhibits a low dark current density, an improved capacity of weak optical signal detection with a peak detectivity of 1.15 x 10(11) Jones under a light density of 1 mW cm(-2), and a response speed with a rise/ fall time of 8/6 mu s operating at a 1550-nm light illumination. The device performance characteristics indicate that MoTe2/Ge heterojunction photodiode is promising for the potential practical applicationof photodetectionat 1550nm.

引用

页码：6825 / 6829

页数：5

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