Topologically close-packed phases: Deposition and formation mechanism of metastable β-W in thin films

被引:38
作者
Liu, Jiaxing [1 ]
Barmak, Katayun [1 ]
机构
[1] Columbia Univ, Dept Appl Phys & Appl Math, New York, NY 10027 USA
基金
美国国家科学基金会;
关键词
beta-W; Nucleation; Adsorption; Thin films; Metastable phases; CHEMICAL-VAPOR-DEPOSITION; TUNGSTEN FILMS; TRANSFORMATION; GROWTH; A-15;
D O I
10.1016/j.actamat.2015.11.049
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
beta-W is a metastable, topologically close-packed phase with the A15 structure. The deposition of beta-W, using N-2 as the impurity gas introduced into the sputtering chamber, is reported and a mechanism for beta-W formation is proposed. Molecules of the impurity gas in the chamber are adsorbed onto the surface during the deposition process and act as nucleation sites for the formation of beta-W. The proposed mechanism is supported by the dependence of beta-W phase fraction in sputter deposited films on pressure of N-2 and on substrate temperature. (C) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:223 / 227
页数:5
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