Effect of interface bonding on spin-dependent tunneling from the oxidized Co surface

被引:84
作者
Belashchenko, KD [1 ]
Tsymbal, EY
van Schilfgaarde, M
Stewart, DA
Oleynik, II
Jaswal, SS
机构
[1] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA
[2] Univ Nebraska, Ctr Mat Res & Anal, Lincoln, NE 68588 USA
[3] Arizona State Univ, Dept Chem & Mat Engn, Tempe, AZ 85287 USA
[4] Sandia Natl Labs, Livermore, CA 94551 USA
[5] Univ S Florida, Dept Phys, Tampa, FL 33620 USA
来源
PHYSICAL REVIEW B | 2004年 / 69卷 / 17期
关键词
D O I
10.1103/PhysRevB.69.174408
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We demonstrate that the factorization of the tunneling transmission into the product of two surface transmission functions and a vacuum decay factor allows one to generalize Julliere's formula and explain the meaning of the "tunneling density of states" in some limiting cases. Using this factorization we calculate spin-dependent tunneling from clean and oxidized fcc Co surfaces through vacuum into Al using the principal-layer Green's-function approach. We demonstrate that a monolayer of oxygen on the Co(111) surface creates a spin-filter effect due to the Co-O bonding which produces an additional tunneling barrier in the minority-spin channel. This changes the minority-spin dominated conductance for the clean Co surface into a majority-spin dominated conductance for the oxidized Co surface.
引用
收藏
页码:174408 / 1
页数:7
相关论文
共 30 条
[1]   Spin-polarized scanning tunnelling microscopy [J].
Bode, M .
REPORTS ON PROGRESS IN PHYSICS, 2003, 66 (04) :523-582
[2]  
Coleman S., 1985, ASPECTS SYMMETRY
[3]  
Datta S., 1999, ELECT TRANSPORT MESO
[4]   Role of metal-oxide interface in determining the spin polarization of magnetic tunnel junctions [J].
De Teresa, JM ;
Barthélémy, A ;
Fert, A ;
Contour, JP ;
Montaigne, F ;
Seneor, P .
SCIENCE, 1999, 286 (5439) :507-509
[5]   Inverse tunnel magnetoresistance in Co/SrTiO3/La0.7Sr0.3MnO3:: New ideas on spin-polarized tunneling [J].
De Teresa, JM ;
Barthélémy, A ;
Fert, A ;
Contour, JP ;
Lyonnet, R ;
Montaigne, F ;
Seneor, P ;
Vaurès, A .
PHYSICAL REVIEW LETTERS, 1999, 82 (21) :4288-4291
[6]  
Harrison W. A., 1970, SOLID STATE THEORY
[7]   Prediction of bias-voltage-dependent corrugation reversal for STM images of bcc (110) surfaces:: W(110), Ta(110), and Fe(110) [J].
Heinze, S ;
Blügel, S ;
Pascal, R ;
Bode, M ;
Wiesendanger, R .
PHYSICAL REVIEW B, 1998, 58 (24) :16432-16445
[8]   TUNNELING BETWEEN FERROMAGNETIC-FILMS [J].
JULLIERE, M .
PHYSICS LETTERS A, 1975, 54 (03) :225-226
[9]   Ab initio instanton molecular dynamics for the description of tunneling phenomena [J].
Katsnelson, MI ;
vanSchilfgaarde, M ;
Antropov, VP ;
Harmon, BN .
PHYSICAL REVIEW A, 1996, 54 (06) :4802-4809
[10]   Ab initio theory of perpendicular magnetotransport in metallic multilayers [J].
Kudrnovsky, J ;
Drchal, V ;
Blaas, C ;
Weinberger, P ;
Turek, I ;
Bruno, P .
PHYSICAL REVIEW B, 2000, 62 (22) :15084-15095