What is the copper thin film thickness effect on thermal properties of NiTi/Cu bi-layer?

被引:0
|
作者
Fazeli, Sara [1 ]
Vahedpour, Morteza [1 ]
Sadrnezhaad, Sayed Khatiboleslam [2 ]
机构
[1] Univ Zanjan, Dept Chem, POB 38791-45371, Zanjan, Iran
[2] Sharif Univ Technol, Dept Mat Sci & Engn, POB 11155-9466, Tehran, Iran
来源
MATERIALS RESEARCH EXPRESS | 2017年 / 4卷 / 02期
关键词
molecular dynamics simulation; melting; NiTi/Cu bi-layer; mean square displacement; TEMPERATURE MOLECULAR-DYNAMICS; CONDUCTIVITY; FORMULATION; FABRICATION; SIMULATION;
D O I
10.1088/2053-1591/aa576e
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Molecular dynamics (MD) simulation was used to study of thermal properties of NiTi/Cu. Embedded atom method (EAM) potentials for describing of inter-atomic interaction and Nose-Hoover thermostat and barostat are employed. The melting of the bi-layers was considered by studying the temperature dependence of the cohesive energy and mean square displacement. To highlight the differences between bi-layers with various copper layer thickness, the effect of copper film thickness on thermal properties containing the cohesive energy, melting point, isobaric heat capacity and latent heat of fusion was estimated. The results show that thermal properties of bi-layer systems are higher than that of their corresponding of pure NiTi. But, these properties of bi-layer systems approximately are independent of copper film thicknesses. The mean square displacement (MSD) results show that, the diffusion coefficients enhance upon increasing of copper film thickness in a linear performance.
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页数:9
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