Stencil reticle development for electron beam projection system

Electron beam (EB) stepper, which is the electron beam projection system (EBPS), has been developed as one of the next generation lithography (NGL) systems for the 100 nm technology generation and beyond. An EB lithography system similar to EBPS is SCALPEL(R) (scattering with the angular limitation projection electron-beam lithography). EBPS and SCALPEL(R) use the scattering contrast principle for the wafer exposure. The development of electron beam scattering reticles is a key issue for the EB lithography system development. The SCALPEL(R) system uses the scattering membrane reticle (SCALPEL(R) mask). The scattering stencil reticle (EB reticle) has been investigated as the reticle for EB steppers. 75 and 200 mm test EB reticles have been developed. The 75 mm test reticle is fabricated with a stress controlled silicon-on-insulator wafer. The fabrication process condition for the 200 mm test reticle is not fixed. The status of risk issues for the EB reticle development is presented. The image placement measurements on the membrane are in agreement with the simulation results. Stencil patterns, consisting of 70 nm lines and spaces, have been exposed with the test reticles using a 100 kV rest column. (C) 1999 American Vacuum Society. [S0734-211X(99)11206-X].