Optical properties and electronic structure of spinel ZnRh2O4

被引：37

作者：

Singh, DJ

Rai, RC

Musfeldt, JL

Auluck, S

Singh, N

Khalifah, P

McClure, S

Mandrus, DG

机构：

[1] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA

[2] Univ Tennessee, Dept Chem, Knoxville, TN 37996 USA

[3] Univ Tennessee, Dept Phys, Knoxville, TN 37996 USA

[4] Indian Inst Technol, Dept Phys, Roorkee 247667, Uttar Pradesh, India

[5] Univ Massachusetts, Dept Chem, Amherst, MA 01003 USA

来源：

CHEMISTRY OF MATERIALS | 2006年 / 18卷 / 11期

关键词：

D O I：

10.1021/cm060160v

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The electronic structure of normal spinel structure ZnRh2O4 is investigated using combined optical properties measurements and density functional calculations. We find semiconducting behavior with an indirect band gap between crystal field split Rh 4d levels, with a t(2g) valence band and an e(g) conduction band. The band gap is found to be similar to 1.2 eV based on a comparison of the calculated and measured optical conductivities. The results are discussed in terms of potential photoelectrochemical applications.

引用

页码：2696 / 2700

页数：5

共 24 条

[1] Photo-electrochemical hydrogen generation from water using solar energy. Materials-related aspects [J].