Band bending at the P3HT/ITO interface studied by photoelectron spectroscopy

被引：27
作者：
Schneider, Martin [1 ,2 ]
Wagenpfahl, Alexander [1 ]
Deibel, Carsten [1 ]
Dyakonov, Vladimir [1 ,3 ]
Schoell, Achim [1 ,2 ,4 ]
Reinert, Friedrich [1 ,2 ,4 ]
机构：
[1] Univ Wurzburg, D-97074 Wurzburg, Germany
[2] Rontgen Res Ctr Complex Mat Syst RCCM, D-97074 Wurzburg, Germany
[3] Bavarian Ctr Appl Energy Res eV ZAE Bayern, D-97074 Wurzburg, Germany
[4] KIT, D-76021 Karlsruhe, Germany
来源：
ORGANIC ELECTRONICS | 2014年 / 15卷 / 07期
关键词：
P3HT; ITO; Band bending; Photoelectron spectroscopy; Defect density; Interface dipole; ELECTRONIC-STRUCTURE; WORK FUNCTION; FILMS;
D O I：
10.1016/j.orgel.2014.03.012
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electronic structure of poly (3-hexylthiophene) (P3HT)/indium tin oxide interfaces was studied by photoelectron spectroscopy (PES). In the thickness dependent core and valence PES data we observe a significant band bending of about (0.8 +/- 0.1) eV within 40 nm distance of the interface. The thickness dependence of the polaronic state follows an exponential law, thus indicating a Schottky-Mott-like behaviour due to trap states. From a drift-diffusion simulation we can determine a p-type doping concentration of C = (5(-4)(+5)) center dot 10(15) cm(-3) and a width of the Gaussian density of states of sigma = 155 meV for a vanishing injection barrier. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：1552 / 1556
页数：5
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