Chemical Vapor Deposition of Ferrimagnetic Fe3O4 Thin Films

被引：11

作者：

Lan, Feifei ^{[1
,2
]}

Zhou, Rui ^{[1
,2
]}

Qian, Ziyue ^{[1
,2
,3
]}

Chen, Yuansha ^{[4
,5
]}

Xie, Liming ^{[1
,2
]}

机构：

[1] Natl Ctr Nanosci & Technol, CAS Key Lab Standardizat & Measurement Nanotechno, Beijing 100190, Peoples R China

[2] Univ Chinese Acad Sci, Sch Nanosci & Technol, Beijing 100049, Peoples R China

[3] Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China

[4] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[5] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

来源：

CRYSTALS | 2022年 / 12卷 / 04期

关键词：

Fe3O4; ultrathin film; chemical vapor deposition; room-temperature ferrimagnetism; Verwey transition; MAGNETIC-PROPERTIES; STRAIN;

D O I：

10.3390/cryst12040485

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Ultrathin magnetic materials with room-temperature ferromagnetism/ferrimagnetism hold great potential in spintronic applications. In this work, we report the successful controllable growth of Fe3O4 thin films using a facile chemical vapor deposition method. Room-temperature ferrimagnetism was maintained in the as-grown Fe3O4 thin films down to 4 nm. Raman spectroscopy, X-ray diffraction and X-ray photoelectron spectroscopy analysis were conducted to reveal the structure and quality of the Fe3O4 film. Magnetization measurement showed ferrimagnetic hysteresis loops in all Fe3O4 thin films. A saturation magnetization of 752 emu/cm(3) was observed for the 4 nm Fe3O4 film, which was higher than that of bulk Fe3O4 materials (480 emu/cm(3)). Additionally, the Verwey transition at similar to 120 K was visible for the Fe3O4 thin films. This work provides an alternative method of synthesizing ferrimagnetic ultrathin films for electronic, spintronic, and memory device applications.

引用

页数：9

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