Analytical description of spectral hole-burning effects in active semiconductors

被引：17

作者：

Balle, S ^{[1
]}

机构：

[1] Univ Illes Balears, Consejo Super Invest Cient, Inst Mediterraneo Estudios Avanzados, Dept Fis Interdisciplinar, E-07071 Palma de Mallorca, Spain

来源：

OPTICS LETTERS | 2002年 / 27卷 / 21期

关键词：

D O I：

10.1364/OL.27.001923

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

An analytical description of the effects of spectral hole burning on the optical properties of active semiconductor materials is developed for fields that are slow compared to intraband relaxation times. Nonlinear gain compression and four-wave mixing effects are discussed. (C) 2002 Optical Society of America.

引用

收藏

页码：1923 / 1925

页数：3

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