Direct Modulation of InAs/GaAs Quantum Dot Lasers on Silicon at 60 °C

被引：0
|
作者：
Jhang, Yuan-Hsuan [1 ]
Mochida, Reio [2 ]
Tanabe, Katsuaki [2 ,3 ]
Takemasa, Keizo [4 ]
Sugawara, Mitsuru [4 ]
Iwamoto, Satoshi [1 ,2 ]
Arakawa, Yasuhiko [1 ,2 ]
机构：
[1] Univ Tokyo, Inst Ind Sci, Tokyo 1138654, Japan
[2] Univ Tokyo, Inst Nano Quantum Informat Elect, Tokyo 1138654, Japan
[3] Kyoto Univ, Dept Chem Engn, Kyoto 6068501, Japan
[4] QD Laser Inc, Kawasaki, Kanagawa, Japan
来源：
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) | 2016年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页数：1
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