Direct Modulation of InAs/GaAs Quantum Dot Lasers on Silicon at 60 °C

被引：0
|
作者：
Jhang, Yuan-Hsuan [1 ]
Mochida, Reio [2 ]
Tanabe, Katsuaki [2 ,3 ]
Takemasa, Keizo [4 ]
Sugawara, Mitsuru [4 ]
Iwamoto, Satoshi [1 ,2 ]
Arakawa, Yasuhiko [1 ,2 ]
机构：
[1] Univ Tokyo, Inst Ind Sci, Tokyo 1138654, Japan
[2] Univ Tokyo, Inst Nano Quantum Informat Elect, Tokyo 1138654, Japan
[3] Kyoto Univ, Dept Chem Engn, Kyoto 6068501, Japan
[4] QD Laser Inc, Kawasaki, Kanagawa, Japan
来源：
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) | 2016年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页数：1
相关论文
共 50 条
  • [31] Investigation into the InAs/GaAs quantum dot material epitaxially grown on silicon for O band lasers
    Tianyi Tang
    Tian Yu
    Guanqing Yang
    Jiaqian Sun
    Wenkang Zhan
    Bo Xu
    Chao Zhao
    Zhanguo Wang
    Journal of Semiconductors, 2022, 43 (01) : 41 - 47
  • [32] Understanding the Bandwidth Limitations in Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon
    Hantschmann, Constanze
    Vasil'ev, Peter P.
    Wonfor, Adrian
    Chen, Siming
    Liao, Mengya
    Seeds, Alwyn J.
    Liu, Huiyun
    Penty, Richard V.
    White, Ian H.
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2019, 37 (03) : 949 - 955
  • [33] 1.3 μm InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers
    JUN WANG
    HAIYANG HU
    HAIYING YIN
    YIMING BAI
    JIAN LI
    XIN WEI
    YUANYUAN LIU
    YONGQING HUANG
    XIAOMIN REN
    HUIYUN LIU
    Photonics Research, 2018, 6 (04) : 321 - 325
  • [34] Lasing characteristics of InAs/GaAs quantum dot lasers with multistacked dot layer
    Qian, J., 2005, Science Press (26):
  • [35] Impact of Dot Size on Dynamical Characteristics of InAs/GaAs Quantum Dot Lasers
    Rajaei, Esfandiar
    Borji, Mahdi Ahmadi
    JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2017, 12 (09) : 945 - 951
  • [36] Improving Reliability of InAs Quantum Dot Lasers on Silicon Substrates
    Selvidge, Jennifer
    Norman, Justin
    Jung, Daehwan
    Hughes, Eammon
    Salmon, Michael
    Bowers, John
    Herrick, Robert
    Mukherjee, Kunal
    2019 IEEE PHOTONICS CONFERENCE (IPC), 2019,
  • [37] Temperature-Stable 25-Gbps Direct-Modulation in 1.3-μm InAs/GaAs Quantum Dot Lasers
    Ishida, Mitsuru
    Matsuda, Manabu
    Tanaka, Yu
    Takada, Kan
    Ekawa, Mitsuru
    Yamamoto, Tsuyoshi
    Kageyama, Takeo
    Yamaguchi, Masaomi
    Nishi, Kenichi
    Sugawara, Mitsuru
    Arakawa, Yasuhiko
    2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2012,
  • [38] 1.3-μm Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon
    Duan, Jianan
    Huang, Heming
    Dong, Bozhang
    Jung, Daehwan
    Norman, Justin C.
    Bowers, John E.
    Grillot, Frederic
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2019, 31 (05) : 345 - 348
  • [39] Effect of junction temperature on 1.3 μm InAs/GaAs quantum dot lasers directly grown on silicon
    Wang, Shuai
    Lv, Zun-Ren
    Wang, Sheng-Lin
    Yang, Xiao-Guang
    Yang, Tao
    AIP ADVANCES, 2024, 14 (02)
  • [40] Thermal runaway and optical efficiency in InAs/GaAs quantum dot lasers
    Chia, C. K.
    Suryana, M.
    Hopkinson, M.
    APPLIED PHYSICS LETTERS, 2009, 95 (14)
12345