Direct Modulation of InAs/GaAs Quantum Dot Lasers on Silicon at 60 °C

被引：0
|
作者：
Jhang, Yuan-Hsuan [1 ]
Mochida, Reio [2 ]
Tanabe, Katsuaki [2 ,3 ]
Takemasa, Keizo [4 ]
Sugawara, Mitsuru [4 ]
Iwamoto, Satoshi [1 ,2 ]
Arakawa, Yasuhiko [1 ,2 ]
机构：
[1] Univ Tokyo, Inst Ind Sci, Tokyo 1138654, Japan
[2] Univ Tokyo, Inst Nano Quantum Informat Elect, Tokyo 1138654, Japan
[3] Kyoto Univ, Dept Chem Engn, Kyoto 6068501, Japan
[4] QD Laser Inc, Kawasaki, Kanagawa, Japan
来源：
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) | 2016年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页数：1
相关论文
共 50 条
  • [1] Direct modulation of 1.3 μm quantum dot lasers on silicon at 60 °C
    Jhang, Yuan-Hsuan
    Mochida, Reio
    Tanabe, Katsuaki
    Takemasa, Keizo
    Sugawara, Mitsuru
    Iwamoto, Satoshi
    Arakawa, Yasuhiko
    OPTICS EXPRESS, 2016, 24 (16): : 18428 - 18435
  • [2] Reflection sensitivity of InAs/GaAs epitaxial quantum dot lasers under direct modulation
    Ding, Shihao
    Dong, Bozhang
    Huang, Heming
    Bowers, John E.
    Grillot, Frederic
    ELECTRONICS LETTERS, 2022, 58 (09) : 363 - 365
  • [3] InAs/GaAs quantum dot lasers
    Schmidt, OG
    Kirstaedter, N
    Ledentsov, NN
    Bimberg, D
    Ustinov, VM
    Egorov, AY
    Zhukov, AE
    Maximov, MV
    Kopev, PS
    Alferov, ZI
    1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 727 - 730
  • [4] Modulation bandwidth of inhomogeneously broadened InAs/GaAs quantum dot lasers
    Qasaimeh, O
    OPTICS COMMUNICATIONS, 2004, 236 (4-6) : 387 - 394
  • [5] Hybrid integration of InAs/GaAs quantum dot microdisk lasers on silicon
    Kryzhanovskaya, Natalia
    Moiseev, Eduard
    Dargunova, Anna
    Zubov, Fedor
    Maximov, Mikhail
    Kalyuzhnyy, Nikolay
    Mintairov, Sergey
    Kulagina, Marina
    Nadtochiy, Alexey
    Zhukov, Alexey
    2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE & EUROPEAN QUANTUM ELECTRONICS CONFERENCE (CLEO/EUROPE-EQEC), 2021,
  • [6] Reliability of InAs/GaAs Quantum Dot Lasers Epitaxially Grown on Silicon
    Liu, Alan Y.
    Herrick, Robert W.
    Ueda, Osamu
    Petroff, Pierre M.
    Gossard, Arthur C.
    Bowers, John E.
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2015, 21 (06) : 690 - 697
  • [7] Effects of modulation p doping in InAs quantum dot lasers on silicon
    Zhang, Zeyu
    Jung, Daehwan
    Norman, Justin C.
    Patel, Pari
    Chow, Weng W.
    Bowers, John E.
    APPLIED PHYSICS LETTERS, 2018, 113 (06)
  • [8] InAs/GaAs quantum-dot lasers and detectors on silicon substrates for silicon photonics
    Lee, Andrew
    Tang, Mingchu
    Jiang, Qi
    Wu, Jiang
    Seeds, Alwyn
    Liu, Huiyun
    2013 IEEE PHOTONICS CONFERENCE (IPC), 2013, : 474 - 475
  • [9] Origin of Defect Tolerance in InAs/GaAs Quantum Dot Lasers Grown on Silicon
    Liu, Zizhuo
    Martin, Mickael
    Baron, Thierry
    Chen, Siming
    Seeds, Alwyn
    Penty, Richard
    White, Ian
    Liu, Huiyun
    Hantschmann, Constanze
    Tang, Mingchu
    Lu, Ying
    Park, Jae-Seong
    Liao, Mengya
    Pan, Shujie
    Sanchez, Ana
    Beanland, Richard
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2020, 38 (02) : 240 - 248
  • [10] Monolithic and hybrid integration of InAs/GaAs quantum dot microdisk lasers on silicon
    Kryzhanovskaya, N.
    Moiseev, E.
    Nadtochiy, A.
    Maximov, M.
    Dragunova, A.
    Fetisova, M.
    Kulagina, M.
    Guseva, Yu
    Mintairov, S.
    Kalyuzhnyy, N.
    Tang, M.
    Liao, M.
    Wu, J.
    Chen, S.
    Liu, H.
    Zhukov, A.
    INTEGRATED OPTICS: DESIGN, DEVICES, SYSTEMS AND APPLICATIONS VI, 2021, 11775
12345