High-Quality Graphenes via a Facile Quenching Method for Field-Effect Transistors

被引：89

作者：

Tang, Y. B. ^{[1
,2
]}

Lee, C. S. ^{[1
,2
]}

Chen, Z. H. ^{[1
,2
]}

Yuan, G. D. ^{[1
,2
]}

Kang, Z. H. ^{[3
]}

Luo, L. B. ^{[1
,2
]}

Song, H. S. ^{[1
,2
]}

Liu, Y. ^{[1
,2
,3
]}

He, Z. B. ^{[1
,2
]}

Zhang, W. J. ^{[1
,2
]}

Elello, I. ^{[1
,2
]}

Lee, S. T. ^{[1
,2
]}

机构：

[1] City Univ Hong Kong, COSDAF, Hong Kong, Hong Kong, Peoples R China

[2] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China

[3] Soochow Univ, Funct Nano & Soft Mat Lab, Suzhou 215123, Jiangsu, Peoples R China

来源：

NANO LETTERS | 2009年 / 9卷 / 04期

关键词：

GAS; PHASE;

D O I：

10.1021/nl803025e

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Single- and few-layer graphene sheets with sizes up to 0.1 mm were fabricated by simply quenching hot graphite in an ammonium hydrogen carbonate aqueous solution. The identity and thickness of graphene sheets were characterized with transmission electron microscopy, atomic force microscopy, and Raman spectroscopy. In addition to its simplicity and scalability, the present synthesis can produce graphene sheets with excellent qualities in terms of sizes, purity, and crystal quality. The as-produced graphene sheets can be easily transferred to solid substrates for further processing. Field-effect transistors based on individual graphenes were fabricated and shown to have high ambipolar carrier mobilities.

引用

页码：1374 / 1377

页数：4

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