Sensitivity of Pt/ZnO Schottky diode characteristics to hydrogen

被引：0
作者：
Kim, S [1 ]
Kang, BS [1 ]
Ren, F [1 ]
Ip, K [1 ]
Heo, YW [1 ]
Norton, DP [1 ]
Pearton, SJ [1 ]
机构：
[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
来源：
STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS XL (SOTAPOCS XL) AND NARROW BANDGAP OPTOELECTRONIC MATERIALS AND DEVICES II | 2004年 / 2004卷 / 02期
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Pt/ ZnO Schottky diodes show changes in forward current of 0.3 mA at a forward bias of 0.5V or alternatively a change of 50 mV bias at a fixed forward current of 8 mA when 5 ppm of H-2 is introduced into a N-2 ambient at 25degreesC. The rectifying current-voltage(I-V) characteristic shows a non-reversible collapse to Ohmic behavior when as little as 50 ppm of H-2 is present in the N-2 ambient. At higher temperatures, the recovery is thermally activated with an activation energy of similar to0.25 eV. This suggests that introduction of hydrogen shallow donors into the ZnO is a contributor to the change in current of the diodes.
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页码：152 / 160
页数：9
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