Random Work Function Induced DC Characteristic Fluctuation in 16-nm High-κ/Metal Gate Bulk and SOI FinFETs

被引：0

作者：

Su, Hsin-Wen ^{[1
]}

Chen, Yu-Yu ^{[1
]}

Chen, Chieh-Yang ^{[1
]}

Cheng, Hui-Wen ^{[1
]}

Chang, Han-Tung ^{[1
]}

Li, Yiming ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect & Comp Engn, Parallel & Sci Comp Lab, 1001 Ta Hsueh Rd, Hsinchu 300, Taiwan

来源：

NANOTECHNOLOGY 2012, VOL 2: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL | 2012年

关键词：

metal gate; random work function; bulk / SOI FinFET; characteristic fluctuation; 3D device simulation; METAL; DEVICES;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work studies the metal gate's work function fluctuation induced DC characteristic fluctuation in the 16-nm bulk and silicon-on-insulator (SOI) fm-type field effect transistor (FinFET) devices using an experimentally calibrated 3D device simulation. The method of localized work function fluctuation simulation enables us to estimate local fluctuations including the nanosized grain's random effects of FinFET with TiN/HfO2 gate stacks. The result of this study shows characteristic fluctuation strongly depends upon the size of localized nanosized metal grains. The shape of grains does have marginal influence on device's variability.

引用

页码：31 / 34

页数：4

共 13 条

[1] Random-work-function-induced characteristic fluctuation in 16-nm-gate bulk and SOI FinFETs
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INTERNATIONAL JOURNAL OF NANOTECHNOLOGY, 2014, 11 (12) : 1029 - 1038
[2] Random Work Function Variation Induced Threshold Voltage Fluctuation in 16-nm Bulk FinFET Devices with High-κ-Metal-Gate Material
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[3] Threshold Voltage Fluctuation in 16-nm-Gate FinFETs Induced by Random Work Function of Nanosized Metal Grain
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[4] Nanosized metal grains induced electrical characteristic fluctuation in 16-nm-gate high-κ/metal gate bulk FinFET devices
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[8] Electrical characteristic fluctuation of 16-nm-gate trapezoidal bulk FinFET devices with fixed top-fin width induced by random discrete dopants
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NANOSCALE RESEARCH LETTERS, 2015, 10 : 1 - 8
[9] Electrical characteristic fluctuation of 16-nm-gate trapezoidal bulk FinFET devices with fixed top-fin width induced by random discrete dopants
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[10] Random Work-Function-Induced Threshold Voltage Fluctuation in Metal-Gate MOS Devices by Monte Carlo Simulation
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