Microsecond time scale lateral-mode dynamics in a narrow stripe InGaN laser

被引：18
作者：
Eichler, C [1 ]
Hofstetter, D
Chow, WW
Miller, S
Weimar, A
Lell, A
Härle, V
机构：
[1] Univ Ulm, Optoelect Dept, D-89069 Ulm, Germany
[2] Univ Neuchatel, Inst Phys, CH-2000 Neuchatel, Switzerland
[3] Sandia Natl Labs, Albuquerque, NM 87185 USA
[4] OSRAM Opto Semicond, D-93049 Regensburg, Germany
来源：
APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 14期
关键词：
D O I：
10.1063/1.1691497
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Time-resolved measurements of the spectrum and the far field of InGaN-based laser diodes show lateral-mode changes and gradual tilting of the far field on a microsecond time scale. Numerical simulations based on a microscopic theory are in good agreement with the measurements. The observed effects are attributed to lateral carrier diffusion in combination with thermal lensing. (C) 2004 American Institute of Physics.
引用
收藏
页码：2473 / 2475
页数：3
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