Rapid fabrication and transport properties of n-type Co4-xNixSb12 via modified polyol process synthesis combined with evacuated-and-encapsulated sintering

被引:25
作者
Gharleghi, Ahmad [1 ]
Liu, Chia-Jyi [1 ]
机构
[1] Natl Changhua Univ Educ, Dept Phys, Changhua 500, Taiwan
关键词
Chemical synthesis; Sintering; X-ray diffraction; Thermoelectric materials; Electrical transport; Scanning electron microscopy; THERMOELECTRIC PROPERTIES; ELECTRONIC-STRUCTURE; BAND-GAP; COSB3; SKUTTERUDITE; DEFECT;
D O I
10.1016/j.jallcom.2014.01.020
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Single phase of Co4-xNixSb12 compounds (x = 0.0, 1.5 epsilon, 2.5 epsilon, 3.0 epsilon, 4.0 epsilon, and epsilon = 0.03125) can be synthesized using the modified polyol reaction for 5 min., following by evacuated-and-encapsulated sintering at 853 K in a short period of time of 5 h. The sintered samples are characterized using X-ray diffraction, scanning electron microscopy, electrical resistivity, thermopower, and Hall measurements. Compared with the non-doped CoSb3, the power factor of Co4-xNixSb12 is enhanced up to 25 times by decreasing the electrical resistivity and reducing the bipolar compensation of thermopower. The simultaneous reduction of fabrication time and preparation temperature coupled with the comparable power factor with the same cobalt skutterudite system prepared via those expensive solid state methods should make this synthesis process of interest for commercial applications. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:277 / 282
页数:6
相关论文
共 37 条
[1]   Effects of defects and impurities on electronic properties in CoSb3 [J].
Akai, K ;
Kurisu, H ;
Shimura, T ;
Matsuura, M .
PROCEEDINGS ICT'97 - XVI INTERNATIONAL CONFERENCE ON THERMOELECTRICS, 1997, :334-337
[2]   Effects of doping on the transport properties of CoSb3 [J].
Anno, H ;
Matsubara, K ;
Notohara, Y ;
Sakakibara, T ;
Tashiro, H .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (07) :3780-3786
[3]   HYDROGENATION AND THE DENSITY OF DEFECT STATES IN AMORPHOUS SILICON [J].
BRODSKY, MH ;
KAPLAN, D .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) :431-435
[4]   TRANSPORT-PROPERTIES OF AMORPHOUS-SILICON FILMS ON QUARTZ SUBSTRATE [J].
CHAKRABARTI, B ;
CHAUDHURI, S ;
PAL, AK .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1983, 22 (06) :903-907
[5]   Enhanced thermoelectric properties in Co4Sb12-xTex alloys prepared by HPHT [J].
Deng, L. ;
Ma, H. A. ;
Su, T. C. ;
Yu, F. R. ;
Tian, Y. J. ;
Jiang, Y. P. ;
Dong, N. ;
Zheng, S. Z. ;
Jia, X. .
MATERIALS LETTERS, 2009, 63 (24-25) :2139-2141
[6]   Effect of Ni on the transport and magnetic properties of Co1-xNixSb3 -: art. no. 115204 [J].
Dyck, JS ;
Chen, W ;
Yang, JH ;
Meisner, GP ;
Uher, C .
PHYSICAL REVIEW B, 2002, 65 (11) :1-9
[7]   Thermoelectric properties of the n-type filled skutterudite Ba0.3Co4Sb12 doped with Ni [J].
Dyck, JS ;
Chen, WD ;
Uher, C ;
Chen, L ;
Tang, XF ;
Hirai, T .
JOURNAL OF APPLIED PHYSICS, 2002, 91 (06) :3698-3705
[8]   Solidification contraction-free synthesis for the Yb0.15Co4Sb12 bulk material [J].
Geng, H. Y. ;
Ochi, S. ;
Guo, J. Q. .
APPLIED PHYSICS LETTERS, 2007, 91 (02)
[9]   Fabrication and Thermoelectric Power Factor of CoSb3 Prepared using Modified Polyol Process and Evacuated- and-Encapsulated Sintering [J].
Gharleghi, Ahmad ;
Chang, Hon-Zi ;
Chen, Yin-Chiao ;
Yang, Yao-Wei ;
Liu, Chia-Jyi .
JOURNAL OF ELECTRONIC MATERIALS, 2013, 42 (07) :1564-1567
[10]   Estimation of the thermal band gap of a semiconductor from Seebeck measurements [J].
Goldsmid, HJ ;
Sharp, JW .
JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (07) :869-872