Magnetoresistance and Hall magnetometry of single submicron ferromagnetic structures

被引:35
作者
Kubrak, V [1 ]
Neumann, A
Gallagher, BL
Main, PC
Henini, M
Marrows, CH
Hickey, BJ
机构
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[2] Univ Leeds, Dept Phys & Astron, Leeds LS9 2JT, W Yorkshire, England
关键词
D O I
10.1063/1.372588
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present measurements on hybrid ferromagnetic/semiconductor devices. Single, submicron ferromagnetic structures have been fabricated directly onto the surface of a semiconductor, which incorporates a near-surface two-dimensional electron gas (2DEG). The induced Hall resistance and magnetoresistance of the 2DEG are used to measure the magnetic properties of the stripes directly. The relative merits of these two techniques are compared using a device geometry in which both types of measurement can be made simultaneously. (C) 2000 American Institute of Physics. [S0021-8979(00)17208-1].
引用
收藏
页码:5986 / 5988
页数:3
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