Si/SiGe n-MODFETs on thin SiGe virtual substrates prepared by means of He implantation

被引:14
作者
Herzog, HJ [1 ]
Hackbarth, T
Seiler, U
König, U
Luysberg, M
Holländer, B
Mantl, S
机构
[1] DaimlerChrysler AG, Res & Technol, D-89081 Ulm, Germany
[2] Inst Festkorperforsch, D-52425 Julich, Germany
[3] Inst Schichten & Grenzflachen, D-52425 Julich, Germany
关键词
He implantation; n-MODFET; SiGe heterostructure; SiGe virtual substrate; strained Si;
D O I
10.1109/LED.2002.801336
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Si/SiGe n-type modulation-doped field-effect transistors grown on a very thin strain-relieved Si0.69Ge0.31 buffer on top of a Si(100) substrate were fabricated and characterized. This novel type of virtual substrate has been created by means of a high dose-He ion implantation localized beneath a 95-nm-thick pseudomorphic SiGe layer on Si followed by a strain relaxing annealing step at 850 degreesC. The layers were grown by molecular beam epitaxy. Electron mobilities of 1415 cm(2)/Vs and 5270 cm(2)/Vs were measured at room temperature and 77 K, respectively, at a sheet carrier density of about 3 X 10(12)/cm(2). The fabricated transistors with Pt-Schottky gates showed good dc characteristics with a drain current of 330 mA/mm and a transconductance of 200 mS/mm. Cutoff frequencies of f(t) = 49 GHz and f(max) = 95 GHz at 100 nm gate length were obtained which are quite close to the figures of merit of a control sample grown on a conventional, thick Si0.7Ge0.3 buffer.
引用
收藏
页码:485 / 487
页数:3
相关论文
共 14 条
[1]   A 70-GHz f(T) low operating bias self-aligned p-type SiGe MODFET [J].
Arafa, M ;
Ismail, K ;
Chu, JO ;
Meyerson, BS ;
Adesida, I .
IEEE ELECTRON DEVICE LETTERS, 1996, 17 (12) :586-588
[2]   0.3 dB minimum noise figure at 2.5 GHz of 0.13 μm Si/Si0.58Ge0.42 n-MODFETs [J].
Enciso, M ;
Aniel, F ;
Crozat, P ;
Adde, R ;
Zeuner, M ;
Fox, A ;
Hackbarth, T .
ELECTRONICS LETTERS, 2001, 37 (17) :1089-1090
[3]   TOTALLY RELAXED GEXSI1-X LAYERS WITH LOW THREADING DISLOCATION DENSITIES GROWN ON SI SUBSTRATES [J].
FITZGERALD, EA ;
XIE, YH ;
GREEN, ML ;
BRASEN, D ;
KORTAN, AR ;
MICHEL, J ;
MII, YJ ;
WEIR, BE .
APPLIED PHYSICS LETTERS, 1991, 59 (07) :811-813
[4]   Artificial substrates for n- and p-type SiGe heterostructure field-effect transistors [J].
Hackbarth, T ;
Kibbel, H ;
Glueck, M ;
Hoeck, G ;
Herzog, HJ .
THIN SOLID FILMS, 1998, 321 :136-140
[5]   0.1μm gate length p-type Ge/Si0.4Ge0.6 MODFET with 135GHz fmax [J].
Höck, G ;
Hackbarth, T ;
Käb, N ;
Herzog, HJ ;
Enciso, M ;
Aniel, F ;
Crozat, P ;
Adde, R ;
Kohn, E ;
König, U .
ELECTRONICS LETTERS, 2000, 36 (16) :1428-1429
[6]   Strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures after hydrogen or helium ion implantation for virtual substrate fabrication [J].
Holländer, B ;
Lenk, S ;
Mantl, S ;
Trinkaus, H ;
Kirch, D ;
Luysberg, M ;
Hackbarth, T ;
Herzog, HJ ;
Fichtner, PFP .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 175 :357-367
[7]  
Ismail K, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P509, DOI 10.1109/IEDM.1995.499249
[8]   High-fT n-MODFETs fabricated on Si/SiGe heterostructures grown by UHV-CVD [J].
Koester, SJ ;
Chu, JO ;
Groves, RA .
ELECTRONICS LETTERS, 1999, 35 (01) :86-87
[9]   High-frequency noise performance of SiGe p-channel MODFETs [J].
Koester, SJ ;
Chu, JO ;
Webster, CS .
ELECTRONICS LETTERS, 2000, 36 (07) :674-675
[10]   Strain relaxation of epitaxial SiGe layers on Si(100) improved by hydrogen implantation [J].
Mantl, S ;
Holländer, B ;
Liedtke, R ;
Mesters, S ;
Herzog, HJ ;
Kibbel, H ;
Hackbarth, T .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 147 (1-4) :29-34