Indium Nanoparticles Capped TiO2 Nanowire Array for Boosted Photosensing Adoption

被引：16

作者：

Yadav, Vinit Kumar ^{[1
]}

Nath, Amitabha ^{[2
]}

Das, Abhijit ^{[2
]}

Mazumder, Julaiba Tahsina ^{[3
]}

Sarkar, Mitra Barun ^{[2
]}

机构：

[1] IIT Delhi, Dept Elect Engn, New Delhi 110016, India

[2] Natl Inst Technol Agartala, Dept Elect & Commun Engn, Agartala 799046, India

[3] Natl Inst Technol Silchar, Dept Elect & Commun Engn, Silchar 788010, India

来源：

IEEE ELECTRON DEVICE LETTERS | 2021年 / 42卷 / 02期

关键词：

Glancing angle deposition; nanoparticles; electron microscopy; photosensor;

D O I：

10.1109/LED.2020.3047272

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The boosted photosensing performances have been reported for Indium (In) nanoparticles (NPs) capped TiO2 nanowire (NW) array using Glancing angle deposition (GLAD) technique. The In NP based photosensor possessed high ideality factor of similar to 12.8 and the enhancement in photoresponsivity has been also observed. The ON/OFF switching irradiation for the In NPs based photosensor has increased from 4.6 mu A to 6.2 mu A and vice versa with a rise time of 0.45 sec and fall time of 0.56 sec.

引用

页码：192 / 195

页数：4

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