Reduced polyaniline decorated reduced graphene oxide/polyimide nanocomposite films with enhanced dielectric properties and thermostability

被引：43

作者：

Feng, Hao ^{[1
]}

Fang, Xinliang ^{[1
]}

Liu, Xiaoyun ^{[1
]}

Pei, Qibing ^{[2
]}

Cui, Zhong-Kai ^{[3
]}

Deng, Shifeng ^{[1
]}

Gu, Jinlou ^{[1
]}

Zhuang, Qixin ^{[1
]}

机构：

[1] East China Univ Sci & Technol, Sch Mat Sci & Engn, Key Lab Adv Polymer Mat Shanghai, Shanghai 200237, Peoples R China

[2] Univ Calif Los Angeles, Dept Mat Sci & Engn, Soft Mat Res Lab, Los Angeles, CA 90095 USA

[3] Univ Montreal, Dept Chem, Succ Ctr Ville, CP 6128, Montreal, PQ H3C 3J7, Canada

来源：

COMPOSITES PART A-APPLIED SCIENCE AND MANUFACTURING | 2018年 / 109卷

基金：

中国国家自然科学基金;

关键词：

Graphene; Polymer-matrix composites (PMCs); Electrical properties; High-temperature properties; POLY(VINYLIDENE FLUORIDE); FUNCTIONALIZED GRAPHENE; POLYMER NANOCOMPOSITES; MECHANICAL-PROPERTIES; POLYIMIDE COMPOSITES; HYBRID FILMS; CONSTANT; OXIDE; PERMITTIVITY; FABRICATION;

D O I：

10.1016/j.compositesa.2018.03.035

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This study reports the synthesis and characterization of reduced polyaniline decorated reduced graphene oxide/polyimide (RGO@R-PANI/PI) nanocomposite films with enhanced dielectric properties and thermostability. The steric effects of R-PANI decorated on the surface of RGO not only prevented the aggregation of RGO but also improved the dispersion of RGO@R-PANI nanosheets in the PI matrix, leading to higher dielectric constant (e) and lower dielectric loss (tans) of the RGO@R-PANI/PI nanocomposite films than those of the RGO/PI nano composite films. The highest dielectric constant (25.84) was observed in the 20 wt% RGO@R-PANI/PI nano composite film (the mass fractions of RGO was 3.44%) with a low dielectric loss of 0.11 at 1 kHz. Furthermore, the 5 wt% weight loss temperature of the 20 wt% RGO@R-PANI/PI nanocomposite films was 480 degrees C, indicating the nanocomposite films are good candidates for dielectric materials under extreme temperature.

引用

页码：578 / 584

页数：7

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