Atomic Layer Deposited Ti2O3 Thin Films

被引：1

作者：

Manjunath, K. ^{[1
]}

Saraswat, A. ^{[1
]}

Samrat, D. ^{[1
]}

Rao, C. N. R. ^{[1
]}

机构：

[1] Jawaharlal Nehru Ctr Adv Sci Res, Int Ctr Mat Sci, Sch Adv Mat, New Chem Unit, Jakkur PO, Bengaluru 560064, India

来源：

CHEMPHYSCHEM | 2022年 / 23卷 / 10期

关键词：

Ti2O3; insulator-metal transition; atomic layer deposition; corundum structure; thin films; CRYSTAL-STRUCTURE; TITANIUM-OXIDES; RUTILE TIO2; TRANSITION; SEMICONDUCTOR; ANATASE; V2O3;

D O I：

10.1002/cphc.202100910

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ti2O3 thin films have been prepared through atomic layer deposition and subjected to electrical resistivity measurements as a function of temperature. The as-prepared films were stable for up to three weeks. In Ti2O3 thin films, the insulator-metal transition is observed at similar to 80 K, with nearly 3-4 orders of magnitude change in resistivity. The anomalous increase in electrical resistivity in the films is in accordance with the two-band model. However, the energy interval between the bands depending on the crystallographic c/a ratio leads to a change in electrical resistivity as a function of temperature.

引用

页数：6

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