Atomic Layer Deposited Ti2O3 Thin Films

被引：1
|
作者：
Manjunath, K. [1 ]
Saraswat, A. [1 ]
Samrat, D. [1 ]
Rao, C. N. R. [1 ]
机构：
[1] Jawaharlal Nehru Ctr Adv Sci Res, Int Ctr Mat Sci, Sch Adv Mat, New Chem Unit, Jakkur PO, Bengaluru 560064, India
来源：
CHEMPHYSCHEM | 2022年 / 23卷 / 10期
关键词：
Ti2O3; insulator-metal transition; atomic layer deposition; corundum structure; thin films; CRYSTAL-STRUCTURE; TITANIUM-OXIDES; RUTILE TIO2; TRANSITION; SEMICONDUCTOR; ANATASE; V2O3;
D O I：
10.1002/cphc.202100910
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Ti2O3 thin films have been prepared through atomic layer deposition and subjected to electrical resistivity measurements as a function of temperature. The as-prepared films were stable for up to three weeks. In Ti2O3 thin films, the insulator-metal transition is observed at similar to 80 K, with nearly 3-4 orders of magnitude change in resistivity. The anomalous increase in electrical resistivity in the films is in accordance with the two-band model. However, the energy interval between the bands depending on the crystallographic c/a ratio leads to a change in electrical resistivity as a function of temperature.
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页数：6
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