Measurement Methodology for Accurate Modeling of SiC MOSFET Switching Behavior Over Wide Voltage and Current Ranges

被引:75
作者
Sakairi, Hiroyuki [1 ]
Yanagi, Tatsuya [1 ]
Otake, Hirotaka [1 ]
Kuroda, Naotaka [1 ]
Tanigawa, Hiroaki [2 ]
Nakahara, Ken [1 ]
机构
[1] Rohm Co Ltd, Dept Res & Dev, Kyoto 6158585, Japan
[2] Keysight Technol Japan GK, EEsof EDA, Tokyo 1928550, Japan
关键词
Circuit simulation; device modeling; double pulse tester; MOSFET; silicon carbide (SiC); S-parameter; switching behavior; INVERTER;
D O I
10.1109/TPEL.2017.2764632
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents two novel measurement methods to characterize silicon carbide (SiC) MOSFET devices. The resulting data are utilized to significantly improve the extraction of a custom device model that can now accurately reproduce device switching behavior. First, we consider the I-d-V-ds output characteristics of power devices such as SiC transistors. These are typically measured using traditional curve tracers, but the characterization of the high-voltage and high-current (HVHC) region is very challenging because of device power compliance and self-heating. In this paper, we introduce a measurement technique that overcomes self-heating and derives the HVHC region from switching waveforms. The switching transient characteristics of devices are used to determine drain current (I-d) as a function of drain-source voltage (V-ds) in the HVHC range. Second, we consider another challenging characterization area: measurement of nonlinear capacitances when device is turned on. These capacitance characteristics of on-state devices are important for correcting disagreements between simulations and measurements in turn-off switching transient waveforms and cannot be measured using a conventional capacitance-voltage meter. We introduce S-parameter measurements as an effective method to obtain the capacitance characteristics of both off-state devices and on-state devices. These novel measurement techniques have been applied to the modeling of a SiC device. The extracted device model, a modified version of the popular Angelov-GaN high-electron-mobility transistor model, shows significant improvement in terms of the accuracy of switching waveforms of devices over a wide range of operating conditions.
引用
收藏
页码:7314 / 7325
页数:12
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