Study of the GaAs, AlGaAs MBE growth dynamics

被引：0
作者：
Chen, YD [1 ]
Liu, XQ
Lu, W
Qiao, YM
Wang, XR
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
[2] Jilin Univ, Dept Elect Engn, Changchun 130023, Peoples R China
来源：
JOURNAL OF INFRARED AND MILLIMETER WAVES | 2000年 / 19卷 / 01期
关键词：
MBE; RHEED; real-rime monitoring; GaAs; AlGaAs;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The intensity oscillations in the various beams in RHEED pattern were observed during MBE growth of GaAs and AlGaAs. The two-dimensional layer-by-layer mode was used to analyze the experiment results and (00),(01) beams intensity oscillations were attributed to the periodic variations of the surface roughness. The existence of the various fractional-order beams indicated that the reconstructed surface existed on the GaAs (001) substrate surface during growth in the present growing conditions, their intensity oscillations were attributed to the reconstruction periodic variations on the two-dimensional island surface.
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收藏
页码：67 / 70
页数：4
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