Effect of oxygen migration on magnetic anisotropy and damping constant in perpendicular Ta/CoFeB/Gd/MgO/Ta multilayers

被引:15
|
作者
Yang, Guang [1 ,2 ]
Zhang, Jing-Yan [1 ]
Jiang, Shao-Long [1 ]
Dong, Bo-Wen [1 ]
Wang, Shou-Guo [1 ]
Liu, Jia-Long [2 ]
Zhao, Yun-Chi [2 ]
Wang, Chao [2 ]
Sun, Young [2 ]
Yu, Guang-Hua [1 ]
机构
[1] Univ Sci & Technol Beijing, Dept Mat Phys & Chem, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, State Key Lab Magnetism, Beijing 100190, Peoples R China
关键词
Oxygen migration; Perpendicular magnetic anisotropy; Magnetic damping; TUNNEL-JUNCTIONS; FILMS; INTERFACE; NM;
D O I
10.1016/j.apsusc.2016.11.012
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
By inserting a Gd layer with strong oxygen-affinitive property, the effect of interfacial oxygen migration on the perpendicular magnetic anisotropy (PMA) and damping constant was investigated in perpendicular Ta/CoFeB/Gd/MgO/Ta multilayers. The overoxidation of CoFeB was greatly suppressed by inserting a thin Gd layer at CoFeB/MgO interface, leading to an O-poor status at interface. Different oxygen migration behavior in samples without and with Gd was observed during the thermal annealing. By optimizing Gd thickness, the effective damping constant of 0.029 and 0.037 was obtained with 0.6 nm Gd layer in out-of-plane and in-plane configuration, respectively. This value was decreased by 70% and 46% with respect to that without Gd layer. More importantly, the PMA can be well maintained when Gd thickness was increased to 1.2 nm. This effective modification of magnetic properties based on oxygen migration provides a promising pathway for spintronic applications. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:705 / 710
页数:6
相关论文
共 50 条
  • [1] Effect of annealing conditions on the perpendicular magnetic anisotropy of Ta/CoFeB/MgO multilayers
    Liu, Yan
    Hao, Liang
    Cao, Jiangwei
    AIP ADVANCES, 2016, 6 (04):
  • [2] Effects of MgO Thickness and Roughness on Perpendicular Magnetic Anisotropy in MgO/CoFeB/Ta Multilayers
    刘毅
    于涛
    朱正勇
    钟汇才
    朱开贵
    Chinese Physics Letters, 2016, (10) : 132 - 135
  • [3] Anisotropy of magnetic damping in Ta/CoFeB/MgO heterostructures
    Rana, Bivas
    Otani, YoshiChika
    SCIENTIFIC REPORTS, 2023, 13 (01)
  • [4] Control of perpendicular magnetic anisotropy and spin pumping damping in MgO/CoFeB/Ta/Pt structures
    Zhu, Zhendong
    Chen, Shaohai
    Zhao, Bingcheng
    Jin, Q. Y.
    Chen, Jingsheng
    Zhang, Zongzhi
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017, 50 (35)
  • [5] Synthetic Antiferromagnetic MgO/CoFeB/Ta(x)/CoFeB/MgO Structures With Perpendicular Magnetic Anisotropy
    Cheng, Chih-Wei
    Cheng, Tsung-I
    Shiue, C. H.
    Weng, Chih-Li
    Tsai, Yan-Chr
    Chern, G.
    IEEE TRANSACTIONS ON MAGNETICS, 2013, 49 (07) : 4433 - 4436
  • [6] Perpendicular magnetic anisotropy in CoFeB/X (X = MgO, Ta, W, Ti, and Pt) multilayers
    Cui, B.
    Song, C.
    Wang, G. Y.
    Wang, Y. Y.
    Zeng, F.
    Pan, F.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2013, 559 : 112 - 115
  • [7] The research of the perpendicular magnetic anisotropy in CoFeB/AlOx/Ta and AlOx/CoFeB/Ta structures
    Chen Xi
    Liu Hou-Fang
    Han Xiu-Feng
    Ji Yang
    ACTA PHYSICA SINICA, 2013, 62 (13)
  • [8] Study on the mechanism of perpendicular magnetic anisotropy in Ta/CoFeB/MgO system
    Yongle Lou
    Yuming Zhang
    Hui Guo
    Daqing Xu
    Yimen Zhang
    Journal of Semiconductors, 2017, (06) : 18 - 21
  • [9] Effect of Mo insertion layers on the magnetoresistance and perpendicular magnetic anisotropy in Ta/CoFeB/MgO junctions
    Almasi, H.
    Xu, M.
    Xu, Y.
    Newhouse-Illige, T.
    Wang, W. G.
    APPLIED PHYSICS LETTERS, 2016, 109 (03)
  • [10] Interfacial electronic structure-modulated magnetic anisotropy in Ta/CoFeB/MgO/Ta multilayers
    Chen, Xi
    Wang, Kai You
    Wu, Zheng Long
    Jiang, Shao Long
    Yang, Guang
    Liu, Yang
    Teng, Jiao
    Yu, Guang Hua
    APPLIED PHYSICS LETTERS, 2014, 105 (09)