Towards the fabrication and measurement of high sensitivity SiC-UV detectors with oxide ramp termination

被引：0

作者：

Brezeanu, G

Godignon, P

Dimitrova, E

Raynaud, C

Planson, D

Mihaila, A

Udrea, F

Milian, J

Amaratunga, G

Boianceanu, C

机构：

[1] Polytech Univ, RO-77206 Bucharest, Romania

[2] CNM, ES-08193 Barcelona, Spain

[3] CEGELY, UMR 5005, INSA Lyon, FR-69621 Villeurbanne, France

[4] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2 | 2004年 / 457-460卷

关键词：

UV detector; oxide ramp termination; OBIC measurements; Medici simulation;

D O I：

10.4028/www.scientific.net/MSF.457-460.1495

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The paper is focused on the simulation, fabrication and measurement of the high UV detection performances of 6H-SiC pn photodiodes based on an efficient planar termination. The oxide ramp technology used for these photo-detectors is extensively presented. The OBIC technique was used for optical measurements of the samples. The impact of diode's bias as well as their photo-response on some incident light power values have been revealed by measurements and numerical simulations. The measurement shows a stronger bias effect on the diode optical properties than the simulation data.

引用

页码：1495 / 1498

页数：4