Effect of indium composition ratio on solution-processed nanocrystalline InGaZnO thin film transistors

被引：151

作者：

Kim, Gun Hee ^{[1
]}

Ahn, Byung Du ^{[1
]}

Shin, Hyun Soo ^{[1
]}

Jeong, Woong Hee ^{[1
]}

Kim, Hee Jin ^{[2
]}

Kim, Hyun Jae ^{[1
]}

机构：

[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

[2] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 23期

关键词：

carrier mobility; gallium compounds; grain size; II-VI semiconductors; indium compounds; nanoelectronics; nanostructured materials; nanotechnology; semiconductor growth; semiconductor thin films; sol-gel processing; stacking faults; surface roughness; thin film transistors; wide band gap semiconductors; AMORPHOUS OXIDE SEMICONDUCTORS; CARRIER TRANSPORT; ROOM-TEMPERATURE; LAYER;

D O I：

10.1063/1.3151827

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of the indium content on characteristics of nanocrystalline InGaZnO (IGZO) films grown by a sol-gel method and their thin film transistors (TFTs) have been investigated. Excess indium incorporation into IGZO enhances the field effect mobilities of the TFTs due to the increase in conducting path ways and decreases the grain size and the surface roughness of the films because more InO2- ions induce cubic stacking faults with IGZO. These structural variations result in a decrease in density of interfacial trap sites at the semiconductor-gate insulator interface, leading to an improvement of the subthreshold gate swing of the TFTs.

引用

页数：3

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