Effect of indium composition ratio on solution-processed nanocrystalline InGaZnO thin film transistors

被引：151

作者：

Kim, Gun Hee ^{[1
]}

Ahn, Byung Du ^{[1
]}

Shin, Hyun Soo ^{[1
]}

Jeong, Woong Hee ^{[1
]}

Kim, Hee Jin ^{[2
]}

Kim, Hyun Jae ^{[1
]}

机构：

[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

[2] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 23期

关键词：

carrier mobility; gallium compounds; grain size; II-VI semiconductors; indium compounds; nanoelectronics; nanostructured materials; nanotechnology; semiconductor growth; semiconductor thin films; sol-gel processing; stacking faults; surface roughness; thin film transistors; wide band gap semiconductors; AMORPHOUS OXIDE SEMICONDUCTORS; CARRIER TRANSPORT; ROOM-TEMPERATURE; LAYER;

D O I：

10.1063/1.3151827

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of the indium content on characteristics of nanocrystalline InGaZnO (IGZO) films grown by a sol-gel method and their thin film transistors (TFTs) have been investigated. Excess indium incorporation into IGZO enhances the field effect mobilities of the TFTs due to the increase in conducting path ways and decreases the grain size and the surface roughness of the films because more InO2- ions induce cubic stacking faults with IGZO. These structural variations result in a decrease in density of interfacial trap sites at the semiconductor-gate insulator interface, leading to an improvement of the subthreshold gate swing of the TFTs.

引用

页数：3

共 50 条

[21] Effect of Single-Wall Carbon Nanotube Doping on Solution-Processed Indium Oxide Thin-Film Transistors
Zhao, Han-Lin
Kim, Sung-Jin
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 72 (01) : 271 - 276
[22] Investigation of solution-processed amorphous SrInZnO thin film transistors
Yoon, Doo Hyun
Kim, Si Joon
Jeong, Woong Hee
Kim, Dong Lim
Rim, You Seung
Kim, Hyun Jae
JOURNAL OF CRYSTAL GROWTH, 2011, 326 (01) : 171 - 174
[23] Bias and illumination instability analysis of solution-processed a-InGaZnO thin-film transistors with different component ratios
Kim, Ji-Hwan
Park, Eung-Kyu
Kim, Min Su
Cho, Hyeong Jun
Lee, Dong-Hoon
Kim, Jin-Ho
Khang, Yoonho
Park, KeeChan
Kim, Yong-Sang
THIN SOLID FILMS, 2018, 645 : 154 - 159
[24] Effect of Ga composition on mobility in a-InGaZnO thin-film transistors
Ahn, Minho
Gaddam, Venkateswarlu
Park, Sungho
Jeon, Sanghun
NANOTECHNOLOGY, 2021, 32 (09)
[25] Effect of the gas flow rate in the focused-oxygen plasma treatment of solution-processed indium oxide thin film transistors
Wang, Xiao-Lin
Zhao, Han-Lin
Tarsoly, Gergely
Zhu, Hang
Lee, Jae-Yun
Kim, Sung-Jin
APPLIED SURFACE SCIENCE, 2024, 643
[26] Trap Kinetics in Solution-Processed Organic Thin-Film Transistors
Singh, Subhash
Mohapatra, Y. N.
IEEE ELECTRON DEVICE LETTERS, 2016, 37 (01) : 35 - 38
[27] Low temperature solution-processed IGZO thin-film transistors
Xu, Wangying
Hu, Luyao
Zhao, Chun
Zhang, Lingjiao
Zhu, Deliang
Cao, Peijiang
Liu, Wenjun
Han, Shun
Liu, Xinke
Jia, Fang
Zeng, Yuxiang
Lu, Youming
APPLIED SURFACE SCIENCE, 2018, 455 : 554 - 560
[28] Effects of Sol-Gel Organic-Inorganic Hybrid Passivation on Stability of Solution-Processed Zinc Tin Oxide Thin Film Transistors
Seo, Seok-Jun
Yang, SeungCheol
Ko, Ji-Hoon
Bae, Byeong-Soo
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011, 14 (09) : H375 - H379
[29] Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors
Zhang, Xue
Lee, Hyeonju
Kwon, Jung-Hyok
Kim, Eui-Jik
Park, Jaehoon
MATERIALS, 2017, 10 (08):
[30] Fluorine incorporation in solution-processed poly-siloxane passivation for highly reliable a-InGaZnO thin-film transistors
Yoshida, Naofumi
Bermundo, Juan Paolo
Ishikawa, Yasuaki
Nonaka, Toshiaki
Taniguchi, Katsuto
Uraoka, Yukiharu
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 51 (12)

← 1 2 3 4 5 →