Numerical simulation of the smooth quantum hydrodynamic model for semiconductor devices

被引：5

作者：

Gardner, CL ^{[1
]}

Ringhofer, C ^{[1
]}

机构：

[1] Arizona State Univ, Dept Math, Tempe, AZ 85287 USA

来源：

COMPUTER METHODS IN APPLIED MECHANICS AND ENGINEERING | 2000年 / 181卷 / 04期

关键词：

quantum hydrodynamic model; semiconductor devices; numerical simulations; electron tunneling;

D O I：

10.1016/S0045-7825(99)00180-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An extension of the classical hydrodynamic model for semiconductor devices to include quantum transport effects is reviewed. This "smooth" quantum hydrodynamic (QHD) model is derived specifically to handle in a mathematically rigorous way the discontinuities in the classical potential energy which occur at heterojunction barriers in quantum semiconductor devices. A conservative upwind discretization of the one-dimensional (1D) steady-state smooth QHD equations is outlined. Smooth QHD model simulations of the resonant tunneling diode are presented which exhibit enhanced negative differential resistance when compared with simulations using the original O((h) over bar(2)) QHD model. (C) 2000 Elsevier Science S.A. AU rights reserved.

引用

页码：393 / 401

页数：9

共 13 条

[1] GLOBAL APPROXIMATE NEWTON METHODS [J].