Searching for large-gap quantum spin hall insulators: boron-nitride/(Pb, Sn)/α-Al2O3 sandwich structures

被引：6

作者：

Wang, Hui ^{[1
,2
,3
]}

Lu, D. ^{[1
,4
]}

Kim, J. ^{[1
]}

Wang, Z. ^{[2
,3
]}

Pi, S. T. ^{[1
]}

Wu, R. Q. ^{[1
,2
,3
]}

机构：

[1] Univ Calif Irvine, Dept Phys & Astron, Irvine, CA 92697 USA

[2] Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

[3] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China

[4] Nanjing Univ Aeronaut & Astronaut, Coll Sci, Nanjing 210016, Jiangsu, Peoples R China

来源：

NANOSCALE | 2017年 / 9卷 / 09期

关键词：

2-DIMENSIONAL TOPOLOGICAL INSULATORS; EPITAXIAL-GROWTH; TRANSITION;

D O I：

10.1039/c7nr00631d

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Topological insulators hold great potential for efficient information processing and storage. Using density functional theory calculations, we predict that a honeycomb lead monolayer can be stabilized on an Al2O3 (0001) substrate to become topologically non-trivial with a sizeable band gap (similar to 0.27 eV). Furthermore, we propose to use a hexagonal boron-nitride (h-BN) monolayer as a protection for the topological states of Pb/Al2O3 and Sn/Al2O3. Our findings suggest new possibilities for designing and protecting two-dimensional TIs for practical applications.

引用

页码：2974 / 2980

页数：7