Searching for large-gap quantum spin hall insulators: boron-nitride/(Pb, Sn)/α-Al2O3 sandwich structures

Topological insulators hold great potential for efficient information processing and storage. Using density functional theory calculations, we predict that a honeycomb lead monolayer can be stabilized on an Al2O3 (0001) substrate to become topologically non-trivial with a sizeable band gap (similar to 0.27 eV). Furthermore, we propose to use a hexagonal boron-nitride (h-BN) monolayer as a protection for the topological states of Pb/Al2O3 and Sn/Al2O3. Our findings suggest new possibilities for designing and protecting two-dimensional TIs for practical applications.