New Schottky-gate bipolar-mode field-effect transistor (SBMFET): Design and analysis using two-dimensional simulation

被引:1
|
作者
Kumar, M. Jagadesh [1 ]
Bahl, Harsh [1 ]
机构
[1] Indian Inst Technol, Dept Elect Engn, New Delhi 110016, India
关键词
bipolar-mode field-effect transistor (BMFET); conductivity modulation; Schottky gates; two-dimensional (2-D) modeling;
D O I
10.1109/TED.2006.880835
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new Schottky-gate bipolar-mode field-effect transistor (SBMFET) is proposed and verified by a two-dimensional simulation. Unlike in the case of conventional BMFET, which uses deep-diffused p(+) regions as the gate, the proposed device uses the Schottky gate formed on the silicon planar surface for injecting the minority carriers into the drift region. The SBMFET is demonstrated to have an improved current-gain, identical breakdown voltage, and ON-voltage drop when compared to the conventional BMFET. Since the fabrication of the SBNWET is much simpler and obliterates the need for deep thermal diffusion of p(+) gates, the SBMFET is expected to be of great practical importance in medium-power high-current switching applications.
引用
收藏
页码:2364 / 2369
页数:6
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