Performance of hetero junction with intrinsic thin-layer solar cell depending upon contact resistivity of front electrode

被引：11

作者：

Lee, Youngseok ^{[1
]}

Han, Sangmyeong ^{[2
]}

Kim, Sunbo ^{[1
]}

Iftiquar, Sk Md ^{[2
]}

Lee, Youn-Jung ^{[2
]}

Yoo, Jinsu ^{[3
]}

Vinh Ai Dao ^{[2
]}

Yi, Junsin ^{[1
,2
]}

机构：

[1] Sungkyunkwan Univ, Dept Energy Sci, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, Coll Informat & Commun Engn, Suwon 440746, South Korea

[3] Korea Inst Energy Res, Solar Energy Dept, Taejon 305343, South Korea

来源：

JOURNAL OF PHOTONICS FOR ENERGY | 2014年 / 4卷

关键词：

heterojunction with intrinsic thin layer solar cell; front electrode; curing temperature; contact resistivity; TECHNOLOGY; RESISTANCE; EFFICIENCY;

D O I：

10.1117/1.JPE.4.043094

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low temperature curing of Ag paste for electrode formation in silicon hetero junction (SHJ) solar cells is important for providing better device characteristics. Ag paste is composed of solvent, various organic materials, and additives; hence its electrical and mechanical adhesion properties depend on the curing conditions. The adhesion of the Ag paste was determined by scratch test, whereas the specific contact resistance was measured using the transfer length method. Various Ag electrodes were formed at various curing temperatures within the temperature range of 160 degrees C-240 degrees C, at 20 degrees C intervals. The curing time was also varied for another set of Ag electrodes. With 200 degrees C temperature and for 20-min curing, the critical load of 20.06 N and specific contact resistance of 19.61 m Omega . cm(2) were observed. Using the same conditions, the efficiency of the SHJ solar cell was found to be improved by 3.8%. (C) 2014 Society of Photo-Optical Instrumentation Engineers (SPIE)

引用

页数：9

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