Ionizing Dose-Tolerant Enhancement-Mode Cascode for High-Voltage Power Devices

被引：1
|
作者：
Witulski, A. F. [1 ]
Sternberg, A. L. [1 ]
Rowe, J. D. [1 ]
Schrimpf, R. D. [1 ]
Zydel, J. [2 ]
Schaf, J. [2 ]
机构：
[1] Vanderbilt Univ, Dept Elect Engn & Comp Sci, 221 Kirkland Hall, Nashville, TN 37235 USA
[2] Moog Inc, Elma, NY 14059 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2017年 / 64卷 / 01期
关键词：
Circuit reliability; gamma rays; gate oxide; MESFETs; MOS devices; power devices; radiation hardening by design; silicon carbide devices; total dose effects; HEMT;
D O I：
10.1109/TNS.2016.2636023
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An enhancement-mode cascode power device topology is described in which a high-voltage commercial device is used in conjunction with a low-voltage radiation-tolerant device to enable a switch that functions well at high total ionizing dose. Although the threshold voltage of the commercial high-voltage power transistor changes significantly with ionizing dose, the threshold voltage of the input device is relatively constant and presents a stable load to the power device drive circuit. Experimental data showing stable input characteristics for the composite devices are presented.
引用
收藏
页码：382 / 387
页数：6
相关论文
共 50 条
  • [21] Recent advances in high-voltage SiC power devices
    Chow, TP
    Ramungul, N
    Ghezzo, M
    1998 HIGH-TEMPERATURE ELECTRONIC MATERIALS, DEVICES AND SENSORS CONFERENCE, 1998, : 55 - 67
  • [22] Series connecting devices for high-voltage power conversion
    Robinson, F. V.
    Hamidi, V.
    2007 42ND INTERNATIONAL UNIVERSITIES POWER ENGINEERING CONFERENCE, VOLS 1-3, 2007, : 1205 - 1210
  • [23] On the specific on-resistance of high-voltage and power devices
    Zingg, RP
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (03) : 492 - 499
  • [24] SiC and GaN high-voltage power switching devices
    Chow, TP
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1155 - 1160
  • [25] INVESTIGATION OF THRESHOLD VOLTAGE VARIATIONS OF ION-IMPLANTED DEPLETION AND ENHANCEMENT-MODE MOSFET DEVICES
    NETHERTON, SW
    OLESZEK, GM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : C101 - C101
  • [26] An Analytical Model for False Turn-On Evaluation of High-Voltage Enhancement-Mode GaN Transistor in Bridge-Leg Configuration
    Xie, Ruiliang
    Wang, Hanxing
    Tang, Gaofei
    Yang, Xu
    Chen, Kevin J.
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2017, 32 (08) : 6416 - 6433
  • [27] Total ionizing dose effects in high voltage devices for flash memory
    Liu, Zhangli
    Hu, Zhiyuan
    Zhang, Zhengxuan
    Shao, Hua
    Chen, Ming
    Bi, Dawei
    Ning, Bingxu
    Wang, Ru
    Zou, Shichang
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2010, 268 (23): : 3498 - 3503
  • [28] DETERMINING THE MODE OF HIGH-VOLTAGE BREAKDOWNS IN VACUUM DEVICES.
    Miller, H.Craig
    Furno, E.J.
    Sturtz, J.P.
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1980, 104 (1-2): : 71 - 75
  • [29] Total Ionizing Dose Effects in High Breakdown Voltage SOI Devices
    Wang, Zhongjian
    Cheng, Xinhong
    Xia, Chao
    Xu, Dawei
    Shen, Lingyan
    Cao, Duo
    Zheng, Li
    Wang, Qian
    Yu, Yuehui
    2014 20TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2014), 2014,
  • [30] Review and Challenges of Characterization in High-voltage and High-power Devices
    He, Xiangning
    Luo, Haoze
    Zhu, Ankang
    Gao, Hongyi
    Hai, Dong
    Li, Wuhua
    Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering, 2024, 44 (18): : 7334 - 7348
12345