Ionizing Dose-Tolerant Enhancement-Mode Cascode for High-Voltage Power Devices

被引：1
|
作者：
Witulski, A. F. [1 ]
Sternberg, A. L. [1 ]
Rowe, J. D. [1 ]
Schrimpf, R. D. [1 ]
Zydel, J. [2 ]
Schaf, J. [2 ]
机构：
[1] Vanderbilt Univ, Dept Elect Engn & Comp Sci, 221 Kirkland Hall, Nashville, TN 37235 USA
[2] Moog Inc, Elma, NY 14059 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2017年 / 64卷 / 01期
关键词：
Circuit reliability; gamma rays; gate oxide; MESFETs; MOS devices; power devices; radiation hardening by design; silicon carbide devices; total dose effects; HEMT;
D O I：
10.1109/TNS.2016.2636023
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An enhancement-mode cascode power device topology is described in which a high-voltage commercial device is used in conjunction with a low-voltage radiation-tolerant device to enable a switch that functions well at high total ionizing dose. Although the threshold voltage of the commercial high-voltage power transistor changes significantly with ionizing dose, the threshold voltage of the input device is relatively constant and presents a stable load to the power device drive circuit. Experimental data showing stable input characteristics for the composite devices are presented.
引用
收藏
页码：382 / 387
页数：6
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