Microwave properties and microstructure of Y1Ba2Cu3O7 thin films

被引：0

作者：

Savvides, N ^{[1
]}

Katsaros, A ^{[1
]}

Reilly, D ^{[1
]}

Foley, C ^{[1
]}

Leong, K ^{[1
]}

Ceremuga, J ^{[1
]}

机构：

[1] JAMES COOK UNIV N QUEENSLAND,TOWNSVILLE,QLD 4811,AUSTRALIA

来源：

CZECHOSLOVAK JOURNAL OF PHYSICS | 1996年 / 46卷

关键词：

D O I：

10.1007/BF02583862

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The microwave properties of high-J(c) (similar to 10(6) A cm(-)2()) c-axis Y1Ba2Cu3O7 thin films on MgO(100) substrates were investigated as a function of the film microstructure. Measurements at 77 K, using a sapphire dielectric resonator operated in the TE(011) mode, show that the microwave surface resistance, R(s), at 10 GHz increases from 0.8 m Ohm for very smooth films to 3-4 m Ohm for films with large scale microstructural defects such as outgrowths and holes or pits. The unloaded quality factor Q(u) decreases from about 96,000 to below 50,000.

引用

页码：1109 / 1110

页数：2

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