Metal-Semiconductor Barrier Modulation for High Photoresponse in Transition Metal Dichalcogenide Field Effect Transistors

被引:114
作者
Li, Hua-Min [1 ]
Lee, Dae-Yeong [1 ]
Choi, Min Sup [1 ]
Qu, Deshun [1 ]
Liu, Xiaochi [1 ]
Ra, Chang-Ho [1 ]
Yoo, Won Jong [1 ]
机构
[1] Sungkyunkwan Univ, Samsung SKKU Graphene Ctr, SKKU Adv Inst Nano Technol, Dept Nano Sci & Technol, Suwon 440746, South Korea
来源
SCIENTIFIC REPORTS | 2014年 / 4卷
基金
新加坡国家研究基金会;
关键词
MOLYBDENUM-DISULFIDE; MOS2; GRAPHENE; PHOTOTRANSISTORS;
D O I
10.1038/srep04041
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
A gate-controlled metal-semiconductor barrier modulation and its effect on carrier transport were investigated in two-dimensional (2D) transition metal dichalcogenide (TMDC) field effect transistors (FETs). A strong photoresponse was observed in both unipolar MoS2 and ambipolar WSe2 FETs (i) at the high drain voltage due to a high electric field along the channel for separating photo-excited charge carriers and (ii) at the certain gate voltage due to the optimized barriers for the collection of photo-excited charge carriers at metal contacts. The effective barrier height between Ti/Au and TMDCs was estimated by a low temperature measurement. An ohmic contact behavior and drain-induced barrier lowering (DIBL) were clearly observed in MoS2 FET. In contrast, a Schottky-to-ohmic contact transition was observed in WSe2 FET as the gate voltage increases, due to the change of majority carrier transport from holes to electrons. The gate-dependent barrier modulation effectively controls the carrier transport, demonstrating its great potential in 2D TMDCs for electronic and optoelectronic applications.
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页数:7
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