Relaxation-time approximations of quasi-hydrodynamic type in semiconductor device modelling

被引:7
|
作者
Melnik, RVN
He, H
机构
[1] CSIRO Math & Informat Sci Sydney, Math Modelling Ind Proc, N Ryde, NSW 2113, Australia
[2] Univ Sydney, Sch Phys, Dept Theoret Phys, Sydney, NSW 2006, Australia
关键词
D O I
10.1088/0965-0393/8/2/304
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We analyse mathematical models for the description of carrier transport in semiconductors as a hierarchy of models constructed on the basis of the the relaxation-time concept. In this hierarchy we focus on a reasonable compromise between drift-diffusion, hydrodynamic, and kinetic models, This compromise is provided by non-local quasi-hydrodynamic mathematical models describing non-equilibrium physical processes in semiconductor devices. Details of the normalization procedure for the quasi-hydrodynamic system will be given along with a transformation of the energy-balance equations to provide computationally convenient forms.
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页码:133 / 149
页数:17
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