Control of temperature distribution to suppress macro-defects in solution growth of 4H-SiC crystals

被引：15

作者：

Hayashi, Yuichiro ^{[1
]}

Mitani, Takeshi ^{[1
]}

Komatsu, Naoyoshi ^{[1
]}

Kato, Tomohisa ^{[1
]}

Okumura, Hajime ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, 16-1 Onogawa, Tsukuba, Ibaraki 3058569, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2019年 / 523卷

关键词：

Roughening; Growth from solutions; Top seeded solution growth; Silicon carbide; SI-CR-C; EPITAXIAL-GROWTH; SURFACE; MORPHOLOGY; MELTBACK; LAYERS;

D O I：

10.1016/j.jcrysgro.2019.125151

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigated the surface roughening in 4H-SiC solution growth from the following two aspects: the roughening of the seed surface before seeding and the roughening caused by the adhesion of SiC particles during growth. First, we investigated the morphological changes of the seed surface before and after the melt-back process. The seed surface just before seeding was covered with macrosteps and 6H-SiC hillocks with a height of several micrometers. This surface roughening was caused by condensation of droplets of vaporized solvent on the seed surface. We found that the 6H-SiC hillocks were the origins of trench defects. The melt-back process completely removed the hillocks and produced a smooth surface adequate for successive bulk growth. Second, we investigated surface roughening caused by the formation of SiC particles. The adhesion of SiC particles on the growth surface introduced trench defects and polytype inclusions. The adhesion of SiC particles was suppressed by controlling the distribution of carbon supersaturation in the solvent.

引用

页数：7

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