Wet etching and chemical polishing of InAs/GaSb superlattice photodiodes

被引：81

作者：

Chaghi, R. ^{[1
]}

Cervera, C. ^{[1
]}

Ait-Kaci, H. ^{[1
]}

Grech, P. ^{[1
]}

Rodriguez, J. B. ^{[1
]}

Christol, P. ^{[1
]}

机构：

[1] Univ Montpellier 2, CNRS, IES, UMR 5214, F-34095 Montpellier 05, France

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2009年 / 24卷 / 06期

关键词：

SULFUR-PASSIVATION; SULFIDE PASSIVATION; SURFACE PASSIVATION; GASB; INAS; SEMICONDUCTORS; INGAASSB; GROWTH;

D O I：

10.1088/0268-1242/24/6/065010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we studied wet chemical etching fabrication of the InAs/GaSb superlattice mesa photodiode for the mid-infrared region. The details of the wet chemical etchants used for the device process are presented. The etching solution is based on orthophosphoric acid (H3PO4), citric acid (C6H8O7) and H2O2, followed by chemical polishing with the sodium hypochlorite (NaClO) solution and protection with photoresist polymerized. The photodiode performance is evaluated by current-voltage measurements. The zero-bias resistance area product R(0)A above 4 x 10(5) Omega cm(2) at 77 K is reported. The device did not show dark current degradation at 77 K after exposition during 3 weeks to the ambient air.

引用

页数：6

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