Atomic-hydrogen-induced self-organization of Si(111) √3 x √3-In surface phase studied by CAICISS and STM

被引:4
作者
Ryu, JT
Kubo, O
Fujino, T
Fuse, T
Harada, T
Kawamoto, K
Katayama, M
Saranin, AA
Zotov, AV
Oura, K
机构
[1] Osaka Univ, Fac Engn, Dept Elect Engn, Suita, Osaka 5650871, Japan
[2] Inst Automat & Control Proc, Vladivostok 690041, Russia
[3] Far Eastern State Univ, Fac Phys & Engn, Vladivostok 690000, Russia
[4] Vladivostok State Univ Econ & Serv, Dept Elect, Vladivostok 690600, Russia
关键词
hydrogen atom; indium; ion scattering spectroscopy; low energy ion scattering (LEIS); scanning tunneling microscopy; silicon; surface chemical reaction; surface structure; morphology; roughness; and topography;
D O I
10.1016/S0039-6028(99)01153-X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Using coaxial impact collision ion scattering spectroscopy (CAICISS), scanning tunneling microscopy (STM), and low-energy electron diffraction (LEED) techniques, we have investigated the interaction of atomic hydrogen with the Si(111)root 3 x root 3-In surface phase at elevated temperatures and structural behavior of In clusters induced by the interaction. Upon atomic hydrogen interaction, Si-In bonds are broken and replaced by Si-H bonds. As a result, the root 3 x root 3 reconstruction is destroyed and small In clusters are formed on hydrogen-terminated Si(111)1 x 1 surface. Using STM, we also have found that the size of the In cluster increases with increasing substrate temperature during hydrogen exposure of the root 3 x root 3-In surface phase. From CAICISS experimental results, we have found that atomic-hydrogen-induced In clusters for Si(111)root 3 x root 3-In surface phase have an In(100) crystalline structure, while those for Si(001)4 x 3-In surface phase are polycrystalline. In conclusion, we have found that structural differences of surface give rise to different atomic-hydrogen-induced self-organization. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:117 / 125
页数:9
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