Zero-field spin splitting and spin-dependent broadening in high-mobility InSb/In1-xAlxSb asymmetric quantum well heterostructures

被引：71

作者：

Gilbertson, A. M. ^{[1
,2
]}

Branford, W. R. ^{[1
]}

Fearn, M. ^{[2
]}

Buckle, L. ^{[2
]}

Buckle, P. D. ^{[2
]}

Ashley, T. ^{[2
]}

Cohen, L. F. ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, London SW7 2BZ, England

[2] QinetiQ, Malvern WR14 3PS, Worcs, England

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 23期

基金：

英国工程与自然科学研究理事会;

关键词：

2-DIMENSIONAL ELECTRON-GAS; READ-HEAD SENSORS; ORBIT INTERACTION; MAGNETORESISTANCE; GAAS; SCATTERING;

D O I：

10.1103/PhysRevB.79.235333

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present high-field magnetotransport data from a range of 30-nm-wide InSb/InAlSb quantum wells with room-temperature mobilities in excess of 6 m(2) V-1 s(-1). Samples with the narrowest Landau level broadening exhibit beating patterns in the magnetoresistance attributed to zero-field spin splitting. Rashba parameters are extracted from a range of samples and gate biases using the difference in spin populations inferred from fast Fourier transforms of the data. The influence of Landau level broadening and spin-dependent scattering rates are investigated by magnetoconductance simulations, which provide key signatures that we were able to verify by experimental observation. These results demonstrate that in addition to the large Zeeman splitting, the combination of large and spin-dependent broadening is the significant parameter in controlling the appearance of beating in these structures.

引用

页数：10

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