Transmission electron microscopy assessment of the Si enhancement of Ti/Al/Ni/Au Ohmic contacts to undoped AIGaN/GaN heterostructures

被引：12

作者：

Desmaris, Vincent ^{[1
]}

Shiu, Jin-Yu

Lu, Chung-Yu

Rorsman, Niklas

Zirath, Herbert

Chang, Edward-Yi

机构：

[1] Chalmers Univ Technol, Microwave Elect Lab, SE-41296 Gothenburg, Sweden

[2] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 100卷 / 03期

关键词：

D O I：

10.1063/1.2218262

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The microstructure of Si/Ti/Al/Ni/Au was investigated using transmission electron microscopy and energy dispersive x-ray spectroscopy. The dependence of the contact resistance on the silicon layer thickness and the temperature was correlated to the microstructure of the alloyed contacts. The enhancement of the contact resistance by inserting a 30 angstrom thick Si layer under the Ti/Al/Ni/Au metallization was attributed to diffusion of the contact into the AlGaN layer. Increasing the Si thickness and or the temperature resulted in the formation of Gold (Au)-based silicides, which prevent the formation of low interfacial TiN or AlN layers. (c) 2006 American Institute of Physics.

引用

页数：4

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