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- [3] A comparison of Al2O3/HfO2 and Al2O3/ZrO2 bilayers deposited by the atomic layer deposition method for potential gate dielectric applications JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (2A): : 919 - 925
- [4] Effect of Al2O3 insertion layer on ferroelectricity in HfO2/ZrO2 nanolaminates Transactions of Nonferrous Metals Society of China (English Edition), 2023, 33 (10): : 3113 - 3121
- [6] A comparison of Al2O3/HfO2 and Al 2O3/ZrO2 bilayers deposited by the atomic layer deposition method for potential gate dielectric applications Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1600, 45 (2 A): : 919 - 925