Surface morphology and Si incorporation in GaSbBi(As)/GaSb films

被引：29

作者：

Duzik, Adam ^{[1
]}

Millunchick, Joanna M. ^{[1
]}

机构：

[1] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2014年 / 390卷

基金：

美国国家科学基金会;

关键词：

Atomic force microscopy; Surfaces; X-ray diffraction; Molecular beam epitaxy; Bismuth compounds; Semiconducting III V materials; MOLECULAR-BEAM-EPITAXY; GROWN GABIAS; GAAS1-XBIX; GAASBI; ALLOY;

D O I：

10.1016/j.jcrysgro.2013.12.001

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Several GaSbBi(As)/GaSb films were grown to investigate the effects of Bi on GaSb surface morphology and bulk composition as a function of growth conditions. Scanning electron microscopy of the surface shows several biphasic droplets consisting of Ga- and Bi-rich phases approximate to 1 mu m in diameter form on the surface. Some of these droplets exhibit more unusual features such as facets, sub-droplets, and droplet etching into the underlying film. Bi droplet coverage shows a direct increase with increasing Bi:Ga and Bi:Sb BEIP ratios. Rutherford backscatter and X-ray diffraction analyses of these films show Bi concentration of up to 12% and a concurrently increasing unintentional As concentration of up to 9.3%, suggesting the presence of a strain auto-compensation mechanism during film growth. Once Bi concentration reaches 10-12%, Bi incorporation saturates, with excess Bi atoms instead accumulating in the droplets. (C) 2013 Elsevier By. All rights reserved.

引用

页码：5 / 11

页数：7

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