On the origin of the 1.5 mu m luminescence in ion beam synthesized beta-FeSi2

被引：79

作者：

Leong, DN

Harry, MA

Reeson, KJ

Homewood, KP

机构：

[1] Department of Electronic and Electrical Engineering, University of Surrey, Guildford

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 12期

关键词：

D O I：

10.1063/1.115893

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter we present photoluminescence results on beta FeSi2/Si using excitation energies above and below the silicon band gap. These results show that the luminescence emission observed at 1.5 mu m can be firmly attributed to band edge related emission from the beta FeSi2. This result confirms the potential of beta FeSi2 as a strong contender for a silicon compatible optoelectronics technology that matches the conventional optical fiber transmission wavelength at 1.5 mu m. (C) 1996 American Institute of Physics.

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页码：1649 / 1650

页数：2

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