Dopant induced morphology changes in ZnO nanocrystals

被引:113
作者
Jayanthi, K. [1 ]
Chawla, Santa [1 ]
Sood, K. N. [1 ]
Chhibara, Manisha [1 ]
Singh, Sukvir [1 ]
机构
[1] Natl Phys Lab, Luminescent Mat & Devices Grp, New Delhi 110012, India
关键词
Solid-state reaction; Photoluminescence; Band edge; Impurities; Nanocrystals; OPTICAL-PROPERTIES; THIN-FILMS; PHOTOLUMINESCENCE; EMISSION; NANOSTRUCTURES; NANOWIRES; ZNS-MN2+; LITHIUM;
D O I
10.1016/j.apsusc.2009.01.032
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Zinc oxide (ZnO) nanocrystals doped with different groups of impurities, e. g., Li, Na, Cu, Pr and Mg synthesized by solid-state reaction method under similar conditions exhibit different morphology. XRD showed monophasic wurtzite structure but change in lattice parameters and Zn-O bond length indicates incorporation of dopant ion in ZnO lattice. The morphology of ZnO nanocrystals exhibited striking dependence on type of dopant ion with the shape changing from nanorods, spherical to petal like particles. Photoluminescence (PL) shows pronounced UV emission and negligible visible emission for Li, Na and Cu doped ZnO nanocrystals with peak positions coinciding with that of undoped ZnO. Whereas signature emission of Pr(3+) ion as well as broad visible emission from Mg doped ZnO revealed the role of intra gap metastable states formed by the dopant ion in the emission process. (C) 2009 Elsevier B. V. All rights reserved.
引用
收藏
页码:5869 / 5875
页数:7
相关论文
共 26 条
[1]   OPTICAL-PROPERTIES OF MANGANESE-DOPED NANOCRYSTALS OF ZNS [J].
BHARGAVA, RN ;
GALLAGHER, D ;
HONG, X ;
NURMIKKO, A .
PHYSICAL REVIEW LETTERS, 1994, 72 (03) :416-419
[2]   Long-lived Mn2+ emission in nanocrystalline ZnS:Mn2+ [J].
Bol, AA ;
Meijerink, A .
PHYSICAL REVIEW B, 1998, 58 (24) :15997-16000
[3]  
Bol AA, 2001, PHYS STATUS SOLIDI B, V224, P291, DOI 10.1002/1521-3951(200103)224:1<291::AID-PSSB291>3.0.CO
[4]  
2-S
[5]  
BRUS LE, 1996, J LUMIN, V70, P1
[6]   Temperature-dependent shifts of three emission bands for ZnO nanoneedle arrays [J].
Cao, BQ ;
Cai, WP ;
Zeng, HB .
APPLIED PHYSICS LETTERS, 2006, 88 (16)
[7]  
Djuisic A.B., 2004, APPL PHYS LETT, V84, P2635
[8]   Random telegraph signal in the photoluminescence intensity of a single quantum dot [J].
Efros, AL ;
Rosen, M .
PHYSICAL REVIEW LETTERS, 1997, 78 (06) :1110-1113
[9]   Photoluminescence spectroscopy of single CdSe nanocrystallite quantum dots [J].
Empedocles, SA ;
Norris, DJ ;
Bawendi, MG .
PHYSICAL REVIEW LETTERS, 1996, 77 (18) :3873-3876
[10]   Photoluminescence and polarized photodetection of single ZnO nanowires [J].
Fan, ZY ;
Chang, PC ;
Lu, JG ;
Walter, EC ;
Penner, RM ;
Lin, CH ;
Lee, HP .
APPLIED PHYSICS LETTERS, 2004, 85 (25) :6128-6130