Electroluminescence from TiO2/p+-Si heterostructure

被引：23
|
作者：
Zhang, Yuanyuan
Ma, Xiangyang
Chen, Peiliang
Li, Dongsheng
Yang, Deren [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 06期
关键词：
boron; electroluminescence; electron-hole recombination; elemental semiconductors; oxidation; semiconductor heterojunctions; semiconductor thin films; silicon; sputter deposition; titanium compounds; transmission electron microscopy; vacancies (crystal); valence bands; TIO2; LUMINESCENCE;
D O I：
10.1063/1.3078409
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Titanium films sputtered on heavily boron-doped (p(+)) silicon substrates were thermally oxidized to form electroluminescent TiO2/p(+)-Si heterostructures. The electroluminescence (EL) features a broad spectrum covering red, green, and blue regions. We believe that in TiO2 recombinations between electrons at oxygen-vacancy-related energy levels and holes in the valence band result in the EL. Furthermore, the EL mechanism has been explained in terms of the energy band diagram of the TiO2/p(+)-Si heterostructure, which possesses an intermediate ultrathin SiOx layer revealed by high resolution transmission microscopy.
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页数：3
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